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Volumn 3412, Issue , 1998, Pages 99-105

Status of x-ray mask development at the IBM Advanced Mask Facility

Author keywords

Defect density; Image placement; Image resolution; Image size; Mask fabrication; Refractory x ray absorber; Tantalum silicon; X ray lithography; X ray mask

Indexed keywords

ANNEALING; ETCHING; REFRACTORY MATERIALS; ULTRAVIOLET RADIATION; X RAYS;

EID: 0038335884     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328846     Document Type: Conference Paper
Times cited : (4)

References (6)
  • 5
    • 0032403752 scopus 로고    scopus 로고
    • UVIII-positive chemically amplified resist optimization
    • to be published 1998
    • J. Rocque, C. Brooks, R. Henry, D. Benoit and P. Mangat "UVIII-positive chemically amplified resist optimization," Proc. SPIE, to be published 1998.
    • Proc. SPIE
    • Rocque, J.1    Brooks, C.2    Henry, R.3    Benoit, D.4    Mangat, P.5
  • 6
    • 0032402788 scopus 로고    scopus 로고
    • Characterization of oxynitride hardmask removal processes for refractory x-ray mask fabrication
    • to be published 1998
    • C. Brooks, D. Benoit, K. Racette, D. Puisto, R. Whig, W. Dauksher, K. Cummings, "Characterization of oxynitride hardmask removal processes for refractory x-ray mask fabrication," Proc. SPIE, to be published 1998.
    • Proc. SPIE
    • Brooks, C.1    Benoit, D.2    Racette, K.3    Puisto, D.4    Whig, R.5    Dauksher, W.6    Cummings, K.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.