Characterization of oxynitride hardmask removal processes for refractory x-ray mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 255-260

  Brooks, Cameron J ^a   Benoit, Douglas E ^a   Racette, Kenneth C ^a   Puisto, Denise M ^a   Whig, Renu ^a   Dauksher, William J ^a   Cummings, Kevin D ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Etch process; Etching hardmask; Hydrofluoric acid; Image placement; Refractory metal; Silicon oxynitride; Stress; Tantalum silicon; X ray mask

Indexed keywords

ETCHING; HYDROFLUORIC ACID; MASKS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTORY METALS;

OXYNITRIDE HARDMASK; REFRACTORY X-RAY MASK FABRICATION;

X RAY LITHOGRAPHY;

EID: 0032402788     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309578     Document Type: Conference Paper

References (5)

1. Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds
2. Uniform low stress oxynitride films for applications as hardmasks on x-ray masks
3. Performance of IBM's EL-4 E-beam lithography system
4. Modeling of in-plane distortion due to variations in absorber stress
5. Accelerated radiation damage testing of x-ray mask membrane materials