Designing dual-trench alternating phase-shift masks for 140 nm and smaller features using 248 nm KrF and 193 nm ArF lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3412, Issue , 1998, Pages 503-520

  Petersen, John S ^a   Socha, Robert J ^b   Naderi, Alex ^c   Baker, Catherine ^c   Rizvi, Syed ^c   VanDenBroeke, Doug ^c   Kachwala, Nishrin ^a   Chen, Fung ^d   Laidig, Tom ^d   Wampler, Kurt E ^d   Caldwell, Roger ^d   Takeuchi, Susumu ^e   Yamada, Yoshiro ^e   Senoh, Takashi ^e   McCallum, Martin ^a  

^a SEMATECH   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c PHOTRONICS INC   (United States)

^d MicroUnity Systems Engineering Inc   (United States)

^e TOPPAN PRINTING CO LTD   (Japan)

Author keywords

100nm; 120nm; 140nm; 180nm; 248nm; Alternating phase shift mask; Dual trench; DUV; Lithography; OPC; Optical proximity correction; Phase measurement; PSM; Simulation

Indexed keywords

ADDITION REACTIONS; ANISOTROPY; COMPUTER SIMULATION; ETCHING; IMAGE QUALITY; MATHEMATICAL MODELS; PHASE MEASUREMENT; PHASE SHIFT; PHOTOLITHOGRAPHY; ULTRAVIOLET RADIATION;

DUAL TRENCH; OPTICAL PROXIMITY CORRECTION; PHASE SHIFT MASK;

MASKS;

EID: 0038335071     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328861     Document Type: Conference Paper

References (12)

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