Ultra-thin-film fully-depleted CMOS/SIMOX technology with selective CVD-tungsten and its application to LSIs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3506, Issue , 1998, Pages 218-229

  Sato, Yasuhiro ^a   Kosugi, Toshihiko ^a   Ishii, Hiromu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

CMOS; CVD; Fully depleted; LSI; Sheet resistance; SIMOX; Tungsten; Ultra thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HYDROGENATION; LSI CIRCUITS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TUNGSTEN;

FULLY DEPLETED; HYDROGEM TERMINATION TREATMENT; INTERNAL THERMAL OXIDATION WAFER; SHEET RESISTANCE;

ULTRATHIN FILMS;

EID: 0038326934     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.323974     Document Type: Conference Paper

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