Statistical nonlinear model of MESFET and HEMT devices

IEE Proceedings: Circuits, Devices and Systems

Volumn 150, Issue 2, 2003, Pages 95-103

  Di Martino, A ^a   Marietti, P ^b   Olivieri, M ^b   Tommasino, P ^b   Trifiletti, A ^b  

^a STMICROELECTRONICS   (Italy)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DATABASE SYSTEMS; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; NONLINEAR SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; STATISTICAL METHODS; TRANSCONDUCTANCE;

MILLIMETRE-WAVE INTEGRATED CIRCUITS;

MESFET DEVICES;

EID: 0038320346     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20030334     Document Type: Article

References (11)

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8. DIMARTINO, A., PISA, S., TOMMASINO, P., and TRIFILETTI, A.: 'A new algorithm to extract the nonlinear model of MESFET's and HEMT's', Microw. Opt. Technol. Lett., 1999, 20, (5), pp. 297-302
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