Oxidation of boron carbide-silicon carbide composite at 1073 to 1773 K

Materials Transactions

Volumn 44, Issue 3, 2003, Pages 401-406

  Narushima, Takayuki ^a   Goto, Takashi ^b   Maruyama, Makoto ^a,c   Arashi, Haruo ^a   Iguchi, Yasutaka ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Boron carbide; Boron oxide; Carbon; Kinetics; Oxidation; Raman spectroscopy; Silica; Silicon carbide

Indexed keywords

INTERFACES (MATERIALS); MELTING; OXIDATION; RAMAN SPECTROSCOPY; RATE CONSTANTS; SURFACES; THERMAL EFFECTS; THERMOGRAVIMETRIC ANALYSIS; VAPORIZATION; X RAY POWDER DIFFRACTION;

ARC MELTING; BORON CARBIDE SILICON CARBIDE COMPOSITE; MASS GAIN;

CARBIDES;

EID: 0038243829     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.44.401     Document Type: Article

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