Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications

Journal of Electronic Materials

Volumn 26, Issue 11, 1997, Pages 1310-1313

  Jung, K B ^a   Lee, J W ^a   Park, Y D ^a   Childress, J R ^a   Pearton, S J ^a   Jenson, M ^b   Hurst Jr , A T ^b  

^a University of Florida   (United States)

^b HONEYWELL   (United States)

Author keywords

Dry etching; Electron cyclotron resonance (ECR) plasma etching; Magnetic thin films; NiFe; NiFeCo; TaN

Indexed keywords

EID: 0011498280     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0076-x     Document Type: Article

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