Performance of a chemically amplified positive resist for next generation photomask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3412, Issue , 1998, Pages 279-291

  Kurihara, Masa Aki ^a   Segawa, Toshikazu ^a   Okuno, Daichi ^a   Hayashi, Naoya ^a   Sano, Hisatake ^a  

^a DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

Air borne contaminant; CD linearity; CD uniformity; Chemically amplified resist; E beam resist; Photomask; Post coating delay stability; Post exposure bake; Post exposure delay stability

Indexed keywords

DRY ETCHING; ELECTRON BEAMS; PERFORMANCE; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPATIAL VARIABLES MEASUREMENT; TEMPERATURE CONTROL;

AIR BORNE CONTAMINANT; CHEMICALLY AMPLIFIED RESIST; CRITICAL DIMENSION LINEARITY; ELECTRON BEAM RESIST; PHOTOMASKS;

MASKS;

EID: 0038185262     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328819     Document Type: Conference Paper

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