Interfacial fluctuations effects on confined excitons in single GaAs/AlxGa1-xAs quantum wells

Surface Science

Volumn 532-535, Issue , 2003, Pages 774-779

  Ferreira, E C ^a,b   Freire, J A K ^a   Freire, V N ^a   Da Costa, J A P ^b   Albuquerque, E L ^b   Mauriz, P W ^a,c   Farias, G A ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^c FEDERAL INSTITUTE OF EDUCATION   (Brazil)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Quantum wells; Semiconductor semiconductor interfaces

Indexed keywords

BINDING ENERGY; EXCITONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; NUMERICAL METHODS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

MICROROUGHNESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038183831     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00403-5     Document Type: Conference Paper

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