Interface-related effects on confined excitons in GaAs/Al x Ga 1-x As single quantum wells

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 191-194

  Ferreira, E C ^a   Da Costa, J A P ^a   Freire, J Al King ^a   Farias, G A ^a   Freire, V N ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Binding energy; Exciton; Interface effects; Quantum well

Indexed keywords

BINDING ENERGY; EXCITONS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MONOLAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

INTERFACE-RELATED EFFECTS;

SURFACE ROUGHNESS;

EID: 0037042088     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00891-1     Document Type: Conference Paper

References (9)