Electron transport properties of C60 single electron transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 18, Issue 1-3, 2003, Pages 247-248

  Nishiguchi, Norihiko ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

C60; NEMS; Shuttle mechanism; Single electron transistor

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FULLERENES; MOLECULAR VIBRATIONS;

CONDUCTION GAP; SINGLE ELECTRON TRANSISTORS (SET);

GATES (TRANSISTOR);

EID: 0038179596     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)01000-7     Document Type: Conference Paper

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