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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 593-596

Thermal desorption process of bromide on Si(111) studied by highly sensitive mass spectroscopy

(6) Shirao, Tetsuro a,b Shudo, Ken Ichi a,b Tanaka, Yoshihito a Nakajima, Toshinobu a,b Ishikawa, Tetsuya a Tanaka, Masatoshi b

a RIKEN/SPring 8 ^* (Japan)

b YOKOHAMA NATIONAL UNIVERSITY (Japan)

Author keywords

Bromine; Desorption kinetics; Etching; Silicon; Thermal desorption

Indexed keywords

ACTIVATION ENERGY; ATOMS; BROMINE COMPOUNDS; DESORPTION; DIFFUSION; LOW ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION;

BROMIDE; HIGHLY SENSITIVE MASS SPECTROSCOPY; ISOTHERMAL DESORPTION METHOD; THERMAL DESORPTION PROCESS;

SEMICONDUCTING SILICON;

EID: 0038082019 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.593 Document Type: Article

Times cited : (9)

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