Failure mechanism of Avalanche photodiodes in the presence of water vapor

Journal of Lightwave Technology

Volumn 19, Issue 2, 2001, Pages 252-265

  Comizzoli, R B ^a   Osenbach, J W ^a   Crane, G R ^a   Peins, G A ^a   Siconolfi, D J ^a   Lorimor, O G ^a   Chang, C C ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Avalanche photodiode (APD); Corrosion; Failure mechanism; Indium phosphide; Nonhermetic package; Reliability; Silicon nitride; Surface current; Temperature humidity bias aging; Voltage acceleration factor; Water vapor

Indexed keywords

ELECTRIC CHARGE; FAILURE ANALYSIS; LEAKAGE CURRENTS; MOISTURE; OPTICAL MICROSCOPY; PHOTODIODES; SCANNING ELECTRON MICROSCOPY; SHORT CIRCUIT CURRENTS; THERMAL EFFECTS; TRANSCEIVERS;

VOLTAGE ACCELERATION FACTOR;

AVALANCHE DIODES;

EID: 0035245226     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.917897     Document Type: Article

References (10)

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