Advanced cylindrical capacitor formation using gas-phase selective etching

Solid State Phenomena

Volumn 92, Issue , 2003, Pages 203-206

  Hanestad, Ron ^a   Schwab, Brent ^a   Butterbaugh, Jeffery W ^a   Lee, Kuntack ^b   Shim, Woo Gwan ^b   Kim, Sang Yong ^b   Han, Yong Pil ^b  

^a FSI International   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Anhydrous HF; Capacitor; DRAM

Indexed keywords

CAPACITANCE; CATALYSTS; DRYING; DYNAMIC RANDOM ACCESS STORAGE; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; STICTION; SUBSTRATES; SURFACE TENSION; WETTING; ASPECT RATIO; CAPACITORS; GASES; MANUFACTURE;

CYLINDRICAL CAPACITOR; GAS PHASE PROCESS; CAPACITOR STRUCTURES; CYLINDRICAL CAPACITORS; HIGH ASPECT RATIO STRUCTURES; INTEGRATED CIRCUIT MANUFACTURING; MANUFACTURING PROCESS; SACRIFICIAL OXIDE; SELECTIVE ETCHING;

CAPACITORS; STICTION;

EID: 0038039287     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.92.203     Document Type: Conference Paper

References (4)

1. B. El-Kareh et al., "The evolution of DRAM cell technology," Solid State Technology 40(5), 89 (1997)
2. Kuntack Lee et al., "An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor", Solid State Phenomena Vols. 76-77, 15(2001).
3. M. Beggans, "Stiction and wear remain fundamental issues in MEMS fabrication", Micromachine Devices, 3(2), 10(1998).
4. A. Ben Hamida et al., "Anhydrous HF etching for stiction-free MEMS process," Micromachine Devices, 5(6), 1 (2000).