An exploration on the bridge formation mechanism of cylindrical storage poly-silicon by water marks in high performance 4Gigabit DRAM capacitor

Solid State Phenomena

Volumn 76-77, Issue , 2001, Pages 15-18

  Lee, Kun Tack ^a   Shim, Woo Gwan ^a   Ko, Hyung Ho ^a   Kim, Ho Young ^a   Han, Yong Pil ^a   Hah, Sang Rock ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Capacitor; DRAMs; Water marks

Indexed keywords

EID: 4243773176     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.76-77.15     Document Type: Conference Paper

References (5)

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2. M. Watanabe et al, “The role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processes" Materials Science and Engineering B4 (1989),. P 401.
3. Jin-Goo Park et al, “The formation of water marks on both hydrophilic and hydrophobic wafers” Mat. Res. Sck . Symp. Proc. 477 (1997). P 513.
4. “Mechanics of Materials 4th” ed. By James M. Gere and S.P. Timoshenko
5. "Physical Chemistry of Surfaces 5th" ed. By Arthur W. Adamson.