Defect formation by low energy ions during sputter deposition of TiW and Au on epitaxially grown n-Si at different plasma pressures

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 249-252

  Deenapanray, P N K ^a   Auret, F D ^a   Myburg, G ^a   Hayes, M ^a   Meyer, W E ^a   Schutte, C ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Defects; DLTS; Magnetron System; Sputter Deposition

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GOLD; IONS; SEMICONDUCTOR DIODES; SPUTTER DEPOSITION; TITANIUM COMPOUNDS;

ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING; SPUTTER DEPOSITION INDUCED (SDI) DEFECTS;

SILICON WAFERS;

EID: 0030721883     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.248-249.249     Document Type: Article

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