Effect of clear field ratio on critical dimension on dry etching process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue , 2001, Pages 396-400

  Lee, C J ^a   Bang, H S ^a   Choi, J W ^a   Jung, H S ^a   Shin, C ^a   Kim, H S ^a  

^a DUPONT COMPANY   (United States)

Author keywords

Critical dimension; EPD (end point detection); Etch to clear time; Over etching

Indexed keywords

CRYSTAL DEFECTS; MASKS; PROCESS CONTROL; SILICON WAFERS;

CLEAR FIELD RATIO; CRITICAL DIMENSION; WET ETCHING;

DRY ETCHING;

EID: 0035190002     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.438357     Document Type: Conference Paper

References (2)

1. Performance of a new high-NA scanned-laser mask lithography system
2. CD performance of a new high-resolution pattern generator