Loading effect parameters at dry etcher system and their analysis at mask-to-mask loading and within-mask loading

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 I, Issue , 2001, Pages 79-87

  Kwon, Hyuk Joo ^a   Min, Dong Soo ^a   Jang, Pil Jin ^a   Chang, Byung Soo ^a   Choi, Boo Yeon ^a   Jeong, Soo Hong ^a  

^a PKL   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FLOW OF FLUIDS; IONS; MATHEMATICAL MODELS; PHOTORESISTS; PLASMA ETCHING;

PHOTORESIST LOADING;

MASKS;

EID: 0035763964     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458353     Document Type: Article

References (5)

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2. M. Mazhar IslamRaja, "Role of ions in plasma deposition processes," VLSI Multilevel Interconnection Conference, pp. 551, 1994.
3. C.J. Mogab, "The loading effect in plasma etching," J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 124, No. 8, pp.1262-1268, 1977.
4. F. Chen, W. Tsai, S. Chegwidden, S. Yu, M. Kamna, J. Farnsworth, and T. Coleman, "Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP7000 resist," 18th Annual BACUS Symposium Photomask Technology 1998, Vol.3546, pp429-437, 1998.
5. H.J. Kwon, K.S. Oh, B.S. Chang, B.Y. Choi, K.H. Park, and S.H. Jeong, "Dry etching technology of Cr and MoSi layers using high-density plasma source," 20th Annual BACUS Symposium Photomask Technology 2000, Vol.4186, pp532-539, 2000.