Diamond nucleation under bias conditions

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 531-539

  Stockel R ^a   Stammler, M ^a   Janischowsky, K ^a   Ley, L ^a   Albrecht, M ^a   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037961365     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366667     Document Type: Article

References (30)

1. B. R. Stoner and J. T. Glass, Appl. Phys. Lett. 60, 698 (1992).
2. X. Jiang and C.-P. Klages, Diamond Relat. Mater. 2, 1112 (1993).
3. R. Kohl, C. Wild, N. Herres, P. Koidl, B. R. Stoner, and J. T. Glass, Appl. Phys. Lett. 63, 1792 (1993).
4. M. Schreck, R. Hessmer, S. Geier, B. Rauschenbach, and B. Stritzker, Diamond Relat. Mater. 3, 510 (1994).
5. H. Kawarada, T. Suesada, and H. Nagasawa, Appl. Phys. Lett. 66, 583 (1995).
6. J. S. Lee, K. S. Liu, and I-N. Lin, Appl. Phys. Lett. 67, 1555 (1995).
7. S. Yugo, T. Kanai, T. Kimura, and T. Muto, Appl. Phys. Lett. 58, 1036 (1991).
8. X. Jiang (private communication).
9. S. Yugo, K. Semoto, K. Hoshina, T. Kimura, and H. Nakai, Diamond Relat. Mater. 4, 903 (1995).
10. S. P. McGinnis, M. A. Kelly, S. B. Hagström, and R. L. Alvis, J. Appl. Phys. 79, 170 (1996).
11. P. Wurzinger, P. Pongratz, J. Gerber, and H. Ehrhardt, Diamond Relat. Mater. 5, 345 (1996).
12. S. Geier, R. Hessmer, U. Preckwinkel, D. Schweitzer, M. Schreck, and Rauschenbach, J. Appl. Phys. 79, 1907 (1996).
13. X. Jiang, M. Paul, and C.-P. Klages, Diamond Relat. Mater. 5, 251 (1996).
14. J. Gerber, M. Weiler, O. Sohr, K. Jung, and H. Ehrhardt, Diamond Relat. Mater. 3, 506 (1994).
15. J. Robertson, Diamond Relat. Mater. 4, 549 (1995).
16. R. Stöckel, K. Janischhowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, and L. Ley, J. Appl. Phys. 79, 768 (1996).
17. R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, and L. Ley, Diamond Relat. Mater. 5, 321 (1996).
18. G. T. Mearini, I. L. Krainsky, J. A. Dayton, Y. Wang, C. A. Zorman, J. C. Angus, and R. W. Hoffman, Appl. Phys. Lett. 65, 2702 (1994).
19. B. R. Stoner, G. H. Ma, S. D. Wolter, W. Zhu, Y.-C. Wang, R. F. Davis, and J. T. Glass, Diamond Relat. Mater. 2, 142 (1993).
20. D. Stenkamp and W. Jäger, Ultramicroscopy 50, 321 (1993).
21. B. R. Stoner, G.-H. M. Ma, S. D. Wolter, and J. T. Glass, Phys. Rev. B 45, 11067 (1992).
22. X. Jiang, K. Schiffmann, and C.-P. Klages, Phys. Rev. B 50, 8402 (1994).
23. W. Zhu, X. H. Wang, B. R. Stoner, G. H. M. Ma, H. S. Kong, M. W. H. Braun, R. F. Davis, and J. T. Glass, Phys. Rev. B 47, 6529 (1993).
24. H. Maeda, M. Irie, T. Hino, and K. K. A. S. Morooka, J. Mater. Res. 10, 158 (1995).
25. Y. Shigesato, R. E. Boekenhauer, and B. W. Sheldon, Appl. Phys. Lett. 63, 314 (1993).
26. M. H. Hon, R. F. Davis, and D. E. Newbury, J. Mater. Sci. 15, 2073 (1980).
27. The quantity that transforms the Si 2p intensity ratio into a SiC layer thickness is the electron mean-free-path λ. This quantity is not known for SiC and diamond and we therefore adopted a value of 2.5 nm for λ as derived from the so-called universal curve [see, e.g., M. P. Seah and W. A. Dench, Surf. Interface Anal. 1, 2 (1979)] The absolute thickness of the SiC layer so obtained may thus be in error by an estimated 50% and is therefore not in contradiction with the TEM results. The error in the relative variation of the SiC layer thickness is given by the error bars in Fig. 12. It si determined by the accuracy with which the Si 2p intensities could be measured. This is the reason why the uncertainty is large under the secondary plasma where the SiC is covered by an appreciable diamond layer.
28. X. Jiang and C. L. Jia, Appl. Phys. Lett. 67, 1197 (1995).
29. C. L. Jia, K. Urba, and X. Jiang, Phys. Rev. B 52, 5164 (1995).
30. M. Albrecht, T. I. Taurbaev, S. B. Baigantova, S. Christiansen, S. B. Aldabergenova, and H. P. Strunk, Diamond Relat. Mater. (to be published).