Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 768-775

  Stockel R ^a   Janischowsky, K ^a   Rohmfeld, S ^a   Ristein, J ^a   Hundhausen, M ^a   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001329852     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360823     Document Type: Article

References (16)

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