Time-resolved photoluminescence study of a ZnO thin film grown on a (1 0 0) silicon substrate

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 252-257

  Guo, Bing ^a   Ye, Zhizhen ^a   Wong, K S ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. Photoluminescence; A3. Metalorganic chemical vapor deposition; B1. Zinc compounds

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; EXCITONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; ZINC OXIDE;

ULTRAVIOLET PHOTODIODES;

THIN FILMS;

EID: 0037948871     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01006-6     Document Type: Article

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