Characterization of uncooled poly SiGe microbolometer for infrared detection

Chinese Physics Letters

Volumn 20, Issue 5, 2003, Pages 770-773

  Dong, Liang ^a   Yue, Rui Feng ^a   Liu, Li Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INFRARED DETECTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE; TEMPERATURE SENSORS;

ANNEALING TEMPERATURES; INFRARED DETECTION; MICRO-BOLOMETERS; OPERATION TEMPERATURE; POLY-SIGE; POLY-SIGE THIN FILMS; RUTHERFORD BACKSCATTERING SPECTROMETRY; TEMPERATURE COEFFICIENTS OF RESISTANCE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION SYSTEMS; UNCOOLED;

BOLOMETERS;

EID: 0037911254     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/5/351     Document Type: Article

References (9)

1. Wood R A 1993 SPIE 2020 322
2. Ichihara T et al 1997 Int. Conf. on Solid-State Sensors and Actuators 1253
3. Tissot J L et al 1998 SPIE 3379 139
4. Shen W and Perera A G 2000 Chin. Phys. Lett. 17 921
5. King T J et al 1994 IEEE Trans. on Electron Devices 228
6. Gerwen P V et al 1996 Sensors and Actuators A 53 325
7. Liddiard K C 1984 Infrared Phys. 24 1795
8. Rossberg D 1995 Int. Conf. on Solid-State Sensors and Actuators 652
9. Yan G et al 2001 Sensors and Actuators A 89 135