Fluorine-doping in titanium dioxide by ion implantation technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 254-258

  Yamaki, T ^a   Umebayashi, T ^b   Sumita, T ^c   Yamamoto, S ^a   Maekawa, M ^a   Kawasuso, A ^a   Itoh, H ^a  

^a TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Anion doping; Electronic structure; Ion implantation; Positron annihilation; RBS channeling; Titanium dioxide (TiO2)

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FLUORINE; IMPURITIES; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

ANION DOPING;

TITANIUM DIOXIDE;

EID: 0037906101     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00735-3     Document Type: Conference Paper

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