Experiments to determine the mean depth scale of positrons in silicon: Slow positron beam measurements on MBE-grown silicon layers on silicon oxide

Applied Surface Science

Volumn 116, Issue , 1997, Pages 247-250

  Gebauer, J ^a   Eichler, S ^a   Krause Rehberg, R ^a   Zeindl, H P ^b  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b Institute of Semiconductor Physics   (Germany)

Author keywords

Amorphous silicon; Positron implantation profile; Positron mean depth

Indexed keywords

AMORPHOUS SILICON; ELECTRON BEAMS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SCANNING ELECTRON MICROSCOPY; SILICA;

POSITRON IMPLANTATION PROFILE; POSITRON MEAN DEPTH;

PARTICLE BEAMS;

EID: 0031547890     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01063-X     Document Type: Article

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