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Volumn 2001-January, Issue , 2001, Pages 45-49

Realization of semiconductor device synthesis with the parallel genetic algorithm

Author keywords

Algorithm design and analysis; Doping profiles; Electric resistance; Electronics packaging; Genetic algorithms; Microelectronics; Optimization methods; Process design; Semiconductor devices; Threshold voltage

Indexed keywords

ALGORITHMS; CHIP SCALE PACKAGES; COMPUTER AIDED DESIGN; DESIGN; ELECTRIC RESISTANCE; ELECTRONICS PACKAGING; GENETIC ALGORITHMS; MICROELECTRONICS; OPTIMIZATION; PROCESS DESIGN; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); THRESHOLD VOLTAGE;

EID: 0037848373     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASPDAC.2001.913279     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 1
    • 0032025763 scopus 로고    scopus 로고
    • Recent advances in process synthesis for semi-conductor devices
    • H. H. Hosack, P. K. Mozumder, and G. P. Pollack, "Recent advances in process synthesis for semi-conductor devices", IEEE Trans. Electron Devices, vol. 45, no. 3, pp626-633, 1998
    • (1998) IEEE Trans. Electron Devices , vol.45 , Issue.3 , pp. 626-633
    • Hosack, H.H.1    Mozumder, P.K.2    Pollack, G.P.3
  • 2
    • 84886448044 scopus 로고    scopus 로고
    • An application of process synthesis methodology for first-pass fabrication success of high-performance deep-submicron CMOS
    • S. Saxena et al., "An application of process synthesis methodology for first-pass fabrication success of high-performance deep-submicron CMOS", IEDM Tech. Dig., pp 149-152, 1997
    • (1997) IEDM Tech. Dig. , pp. 149-152
    • Saxena, S.1
  • 5
    • 0031996674 scopus 로고    scopus 로고
    • Use of Focused-Ion-Beam and modeling to optimize submicron MOSFET characteristics
    • C.-C. Shen et al., "Use of Focused-Ion-Beam and modeling to optimize submicron MOSFET characteristics", IEEE Trans. Electron Devices, vol. 45, no. 2, pp453-459, 1998
    • (1998) IEEE Trans. Electron Devices , vol.45 , Issue.2 , pp. 453-459
    • Shen, C.-C.1
  • 6
    • 0033095271 scopus 로고    scopus 로고
    • Drive performance of an asymmetric MOSFET structure: The peak device
    • M. Stockinger et al., "Drive performance of an asymmetric MOSFET structure: the peak device", Microelectronics Journal, 30, pp229-233, 1999
    • (1999) Microelectronics Journal , vol.30 , pp. 229-233
    • Stockinger, M.1
  • 7
    • 84949888722 scopus 로고    scopus 로고
    • Realization of Device Decomposition for Technology Synthesis with the Genetic Algorithm
    • Beijing
    • Z. Li, X. Xie, W. Zhang, Z. Yang, "Realization of Device Decomposition for Technology Synthesis with the Genetic Algorithm", ICDA Conference, Beijing, 2000
    • (2000) ICDA Conference
    • Li, Z.1    Xie, X.2    Zhang, W.3    Yang, Z.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.