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Volumn 48, Issue 6, 2003, Pages 717-721

Use of the temperature peak model for the description of track formation in semiconductor crystals irradiated by fast heavy ions

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[No Author keywords available]

Indexed keywords


EID: 0037820539     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1583824     Document Type: Article
Times cited : (12)

References (18)
  • 4
    • 0038791042 scopus 로고    scopus 로고
    • [Tech. Phys. 43, 1048 (1998)]
    • V. A. Belyǐ and F. F. Komarov, Zh. Tekh. Fiz. 68 (9), 42 (1998) [Tech. Phys. 43, 1048 (1998)].
    • (1998) Zh. Tekh. Fiz. , vol.68 , Issue.9 , pp. 42
    • Belyǐ, V.A.1    Komarov, F.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.