Transfer of thin Si layers by cold and thermal ion cutting

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 299-303

  Henttinen, K ^a   Suni, T ^a   Nurmela, A ^a   Luoto, H V A ^a   Suni, I ^a   Airaksinen, V M ^b   Karirinne, S ^c   Cai, M ^d   Lau, S S ^d  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^b Okmetic Oyj   (Finland)

^c TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL BONDS; CRYSTAL ORIENTATION; DIFFUSION IN GASES; DISSOCIATION; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE OPERATIONS; HYDROGEN; ION IMPLANTATION; SEMICONDUCTOR DOPING; SILICON WAFERS;

CRACK OPENING METHOD; MECHANICAL EXFOLIATION; N-TYPE AFTER ANNEALING; P-TYPE CONDUCTIVITY; THERMAL ION CUTTING;

THIN FILMS;

EID: 0037811396     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023963626033     Document Type: Article

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