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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 171-174

Preparation and photoluminescence study of high purity CdTe single crystals

(6) Yang, B a,c Ishikawa, Y a Miki, T a Doumae, Y b Tomizono, T b Isshiki, M a

a TOHOKU UNIVERSITY (Japan)

b Osaka Asahi Metal Mfg Co Ltd (Japan)

c CHANGCHUN INSTITUTE OF OPTICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; IMPURITIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PURIFICATION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM PURITY EFFECT; EMISSION LINE; PHYSICAL VAPOR TRANSPORT METHOD; RESIDUAL IMPURITIES; SEMICONDUCTING CADMIUM TELLURIDE; VERTICAL BRIDGMAN METHOD;

SINGLE CRYSTALS;

EID: 0030562403 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00643-5 Document Type: Article

Times cited : (14)

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