High density and long retention non-destructive readout FeRAM using a linked cell architecture

Integrated Ferroelectrics

Volumn 40, Issue 1-5, 2001, Pages 41-54

  Shimada, Y ^a   Kato, Y ^a   Yamada, T ^a   Tanaka, K ^a   Otsuki, T ^a   Chen, Z ^b   Lim, M ^b   Joshi, V ^b   McMillan, L ^b   De Araujo, C A Paz ^b  

^a PANASONIC CORPORATION   (Japan)

^b Symetrix Corporation   (United States)

Author keywords

FeRAM; Ferroelectric memory; FET; Non destructive readout

Indexed keywords

COMPUTER PROGRAMMING; FLASH MEMORY; NETWORKS (CIRCUITS); RANDOM ACCESS STORAGE;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM); NON-DESTRUCTIVE READOUT;

FERROELECTRIC DEVICES;

EID: 0037771789     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108010828     Document Type: Article

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