Admittance spectroscopy for non-crystalline thin film devices characterization: Comparison of Cu(In,Ga)Se2 and a-Si:H cases

Thin Solid Films

Volumn 431-432, Issue , 2003, Pages 135-142

  Mencaraglia, D ^a   Ould Saad, S ^a   Djebbour, Z ^a  

^a UNIV PARIS SUD   (France)

Author keywords

Admittance spectroscopy; Amorphous silicon; Copper indium diselenide; Non crystalline semiconductors; Solar cells

Indexed keywords

AMORPHOUS SILICON; COPPER COMPOUNDS; CRYSTAL DEFECTS; SEMICONDUCTOR DEVICES; SOLAR CELLS; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY;

THIN FILM DEVICES;

EID: 0037680604     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00198-6     Document Type: Conference Paper

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