First-principle theoretical study on the electronic properties of SiO 2 models with hydrogenated impurities and charges

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 463-470

  Doi, Kentaro ^a   Nakamura, Koichi ^a   Tachibana, Akitomo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Breakdown of SiO 2; Charge trapping; First principle calculation; Hydrogenated impurity; Molecular dynamics; Potential energy surfaces

Indexed keywords

ELECTRONIC PROPERTIES; HYDROGENATION; IMPURITIES; MOLECULAR DYNAMICS; POTENTIAL ENERGY;

HYDROGENATED IMPURITIES;

SILICA;

EID: 0037670096     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00407-0     Document Type: Conference Paper

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