Laser transitions under resonant optical pumping of donor centres in Si:P

Applied Physics B: Lasers and Optics

Volumn 76, Issue 5, 2003, Pages 613-616

  Zhukavin, R Kh ^a   Gaponova, D M ^a   Muravjov, A V ^a   Orlova, E E ^a   Shastin, V N ^a   Pavlov, S G ^a,b   Hubers H W ^b   Hovenier, J N ^c   Klaassen, T O ^c   Riemann, H ^d   Van Der Meer, A F G ^e  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^e FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ENERGY GAP; FREE ELECTRON LASERS; PHOSPHORUS; SEMICONDUCTING SILICON;

ACOUSTIC PHONON SPONTANEOUS EMISSION; AUGER REDISTRIBUTION; LASER TRANSITIONS; ODD-PARITY DONOR EXCITED STATES; TERAHERTZ STIMULATED EMISSION;

OPTICAL PUMPING;

EID: 0037669741     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-003-1167-x     Document Type: Article

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