Far-infrared active media based on shallow impurity state transitions in silicon

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 859-863

  Orlova, E E ^a   Zhukavin, R Ch ^a   Pavlov, S G ^a   Shastin, V N ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032282509     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<859::AID-PSSB859>3.0.CO;2-Q     Document Type: Article

References (8)

1. M. LAX, Phys. Rev. 119, 1502 (1960).
2. W. PICKIN, Phys. Rev. B 20, 2451 (1979).
3. V.N. ABAKUMOV, V.I. PEREL, and I.N. YASSIEVICH, Nonradiative Recombination in Semiconductors, North-Holland Publ. Co., Oxford 1991.
4. N.R. BUTLER, P. FISHER, and A.K. RAMDAS, Phys. Rev. B 12, 3200 (1975).
5. G. ASCARELLY and S. RODRIQUEZ, Phys. Rev. 124, 1321 (1961).
6. K. GEERINCK, Doctor degree thesis, Technical University of Delft (1995).
7. F.J. MORIN and J.P. MAITA, Phys. Rev. 96, 28 (1954).
8. A.K. RAMDAS and S. RODRIGUEZ, Rep. Progr. Phys. 44, 1297 (1981).