Terahertz emission from silicon doped by shallow impurities

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 232-235

  Hubers H W ^a   Pavlov, S G ^a   Rummeli M H ^a   Zhukavin, R Kh ^b   Orlova, E E ^b   Riemann, H ^c   Shastin, V N ^b  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Shallow impurity; Silicon; Stimulated emission; THz

Indexed keywords

CARBON DIOXIDE LASERS; ELECTROMAGNETIC FIELDS; ELECTRON ENERGY LEVELS; IMPURITIES; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; STIMULATED EMISSION;

POPULATION INVERSION;

SEMICONDUCTING SILICON;

EID: 0035678562     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00679-2     Document Type: Article

References (9)