Crystal SiGeC far infrared sensor with temperature isolation improvement structure

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 656-658

  Hsieh, Ming Chun ^a   Fang, Yean Kuen ^a   Wu, Pei Ming ^a   Wang, Wen De ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALS; INFRARED DETECTORS; INFRARED RADIATION; MICROELECTROMECHANICAL DEVICES; SILICON COMPOUNDS; THERMAL CONDUCTIVITY; THERMISTORS;

FAR INFRARED (FIR) SENSORS;

CHEMICAL SENSORS;

EID: 0037666371     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030442     Document Type: Article

References (6)

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2. SEDKY, S., FIORINI, P., CAYMAX, M., VERBIST, A., and BAERT, C.: 'IR bolometers made of polycrystalline silicon germanium', Sens. Actuators A. Phys., 1998. 66, (1-3). pp. 193-199
3. NAKAJIMA, K., KUSUNOKI, T., AZUMA, Y., USAMI, N., FUJIWARA, K., UJIHARA, T., SAZAKI, G., and SHISHIDO, T.: 'Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystal', J. Cryst. Growth. 2002, 240, pp. 378-381
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6. LIDDIARD, K.C.: 'Thin film resistance bolometer IR detectors', Infrared Phys., 1984, 24, p. 57