Wafer-scale spontaneous bonding of silicon wafers by argon-beam surface activation at room temperature

Sensors and Actuators, A: Physical

Volumn 105, Issue 1, 2003, Pages 98-102

  Takagi, Hideki ^a   Maeda, Ryutaro ^a   Suga, Tadatomo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ar beam; Room temperature bonding; Si wafer; Spontaneous bonding; Surface activation; Wafer bonding

Indexed keywords

BONDING; ETCHING; FRACTURE; HEAT TREATMENT; INFRARED RADIATION; MICROSTRUCTURE; SILICON WAFERS; TENSILE TESTING;

WAFER BONDING;

CHEMICAL SENSORS;

EID: 0037645757     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(03)00087-6     Document Type: Article

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