Modeling of temperature dependent contact resistance for analysis of ESD reliability

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 249-255

  Oh, Kwang Hoon ^a   Chun, Jung Hoon ^a   Banerjee, Kaustav ^b   Duvvury, Charvaka ^c   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b University of California   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FAILURE ANALYSIS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

CONTACT RESISTANCE;

ELECTRIC DISCHARGES;

EID: 0037634539     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (32)

1. K. K. Ng and W. L. Lynch, "The impact of intrinsic series resistance on MOSFET scaling," IEEE Trans. Electron Device, Vol. ED-34, No. 3, pp. 503-511, 1987.
2. P. K. Chatterjee, W. R. Hunter, T. C. Holloway, and Y. T. Lin, "The impact of scaling laws on the choice of n-channel and p-channel for MOS VLSI," IEEE Electron Device Lett., Vol. EDL-1, pp. 220-223, 1980.
3. M. Jeng, J. E. Chung, P. Ko, and C. Hu, "The effect of source/drain resistance on deep submicrometer device performance," IEEE Trans. Electron Devices, vol. 37, No. 11, pp. 2408-2410, 1990.
4. K. Banerjee, A. Amerasekera, G. Dixit and C. Hu, "Temperature and current effects on small-geometry-contact resistance," Tech. Dig. IEDM, pp. 115-118, 1997.
5. S-D Kim, C-M. Park, and J. C. S. Woo, "Advanced model and analysis of series resistance for CMOS scaling into nanometer regime-part I: theoretical derivation," IEEE Trans. Electron Device, Vol. 49, No. 3, pp. 457-466, 2002.
6. S-D. Kim, C-M. Park, and J. C. S. Woo, "Advanced model and analysis of series resistance for CMOS scaling into nanometer regime-part II: quantative analysis," IEEE Trans. Electron Device, Vol. 49, No. 3, pp. 467-472, 2002.
7. M. Ieong, P. M. Solomon, S. E. Laux, H.-S. P. Wong, and D. Chidambarrao, "Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model," Tech. Dig. IEDM, pp. 1174-1176, 1999.
8. T. Ohguro, S. Nakamura, M. Saito, M. Ono, H. Harakawa, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "Ultra-shallow junction and salicided techniques for advanced CMOS devices," J. Electrochem. Soc., Vol. 97-3, pp.275-289, 1997.
9. R. W. Mann, L. A. Clevenger, P. D. Agnello, and F. R. White, "Silicides and local interconnections for high-performance VLSI applications," IBM J. Res. Develop., Vol. 39, No. 4, pp. 33-46, 1995.
10. D. B. Scott, W. R. Hunter, and H. Shichijo, "A transmission line model for silicided diffusions: impact on the performance of VLSI circuits," IEEE Trans. Electron Device, Vol. ED-29, No. 4, pp. 651-661, 1982.
11. D. B. Scott, R. A. Chapman, C-C. Wei, S. S. Mahant-shetti, R. A. Haken, and T. C. Holloway, "Titanium disilicided contact resistivity and its impact on 1-μm CMOS circuit performance," IEEE Trans. Electron Device, Vol. ED-34, No. 3, pp. 562-573, 1987.
12. G. Notermans, A. Heringa, M. van Dort, S. Jansen and F. Kuper, "The effect of silicide on ESD performance," Proceedings of the IRPS, pp. 154-158, 1999.
13. K-H. Oh, K. Banerjee, C. Duvvury and R. W. Dutton, "Investigation of gate to contact spacing effect on ESD robutness of salicided deep submicron single finger NMOS transistors," Proceedings of the IRPS, pp. 148-155, 2002.
14. K. Varahramyan and E. J. Verret, "A model for specific contact resistance applicable for titanium silicide-silicon contacts," Solid-State Electronics, Vol. 39, No. 11, pp. 1601-1607, 1996.
15. S. M. Sze, Physics of Semiconductor Devices, New York: Wiley, 1981.
16. F. A. Padovani and R. Stratton, "Field and thermionic-field emission in Schottky barriers," Solid-State Electronics, Vol. 9, pp. 695-707, 1966.
17. A. Y. C. Yu, "Electron tunneling and contact resistance of metal-silicon contact barriers," Solid-State Electronics, Vol. 13, pp. 239-247, 1970.
18. C. R. Crowell and V. L. Rideout, "Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers," Solid-State Electronics, Vol. 12, pp.89-105, 1969.
19. C. R. Crowell, "Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes," Sola-State Electronics, Vol. 12, pp. 55-59, 1969.
20. W. B. Joyce and R. W. Dixon, "Analytic approximations for the Fermi energy of an ideal Fermi gas," Appl. Phys. Lett., Vol. 31, No. 5, pp. 354-356, 1977.
21. M. A. Green, "Intrinsic concentration, effective densities of states, and effective mass in Silicon," J. Appl. Phys., vol. 67, no. 6, pp. 2944-2954, 1990.
22. A. M. Cowley and S. M. Sze, "Surface states and barrier height of metal-semiconductor systems," J. Appl. Phys., Vol. 36, No. 10, pp. 3212-3220, 1965.
23. Y-S. Lou and C-Y. Wu, "A self-consistent characterization methodology for Schottky- barrier diodes and ohmic contacts," IEEE Trans. Electron Devices, Vol. 41, No. 4, pp. 558-566, 1994.
24. F. H. Gaensslen, R. C. Jaeger, "Temperature dependent threshold behavior of depletion mode MOSFET," Solid-State Electronics, Vol. 22, pp. 423-430, 1979.
25. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien New York, 1984.
26. K. K. Ng and R. Liu, "On the calculation of specific contact resistivity on 〈100〉 Si," IEEE Trans. Electron Device, Vol. 37, No. 6, pp. 1535-1537, 1990.
27. C. R. Crowell, "The Richardson constant for thermionic emission in Schottky barrier diodes," Solid-State Electronics, Vol. 8, pp.395-399, 1965.
28. K. Banerjee, A. Amerasekera, J. A. Kittl and C. Hu, "High current effects in silicide films for sub-0.25 μm VLSI technologies," Proceedings of the IRPS, pp. 284-292, 1998.
29. N. Arora, MOSFET Models for VLSI Circuit Simulation, Springer-Verlag, Wien New York, 1993.
30. R. Rountree, "ESD Protection for submicron CMOS circuits issues and solutions," Tech. Dig. IEDM, 311-314, 1993.
31. MEDICI Manual, TMA Inc., Sunnyvale, CA, 1997.
32. F. Capasso and G. Margaritondo, Heterojunction Band Discontinuities: Physics and Device Applications, Elsevier Science, 1987.