1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 313-317

  Toita, M ^a,b   Sugawa, S ^a   Teramoto, A ^a   Akaboshi, T ^b   Imai, H ^b   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Asahi Kasei Fibers Corporation   (Japan)

Author keywords

1 f noise; Border traps; Fowler Nordheim tunneling; MOS FET; Plasma damage

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRODES; ETCHING; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPURIOUS SIGNAL NOISE;

PLASMA DAMAGE;

MOSFET DEVICES;

EID: 0037634498     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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