Compensation of long-range process effects on photomasks by design data correction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 59-66

  Schneider, Jens ^a   Blöcker, Martin ^a   Ballhorn, Gerd ^a   Belic, Nikola ^b,d   Eisenmann, Hans ^b   Keogan, Danny ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b PDF Solutions GmbH   (Germany)

^c SYNOPSYS INC   (United States)

^d PDF Solutions   (Germany)

Author keywords

CATS; Dry Etch Loading; Mask Process Correction; Pattern Density

Indexed keywords

COMPUTER SOFTWARE; DATA ACQUISITION; DRY ETCHING; ELECTRON BEAMS;

DATA CORRECTION;

MASKS;

EID: 0037627748     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467572     Document Type: Conference Paper

References (7)

1. "International technology roadmap for semiconductors (ITRS)," 2001. see also at http://public.itrs.net.
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3. J. Y. Lee, S. Y. Cho, C. H. Kim, S. W. Lee, S. W. Choi, W. S. Han, and J. M. Sohn, "Analysis of dry etch loading effect in mask fabrication," in 21st Annual BACUS Symposium Photomask Technology, G. T. Dao and B. J. Grenon, eds., Proc. SPIE 4562, pp. 609-615, 2002.
4. Y. Granik, "Correction for etch proximity: new models and applications," in Optical Microlithography XIV, C. J. Progler, ed., Proc. SPIE 4346, pp. 98-112, 2001.
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6. G. Ballhorn, "Slashing turn around time by introducing distributed computing," in 21st Annual BACUS Symposium on Photomask Technology, G. T. Dao and B. Grenon, eds., Proc. SPIE 4562, pp. 183-193, 2002.
7. G. Ballhorn, M. Blöcker, D. Keogan, and P. Moberts, "Advanced and highly reliable distributed computing in a fully automated environment." this volume.