Analysis of dry etch loading effect in mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 609-615

  Lee, Jeong Yun ^a   Cho, Sung Yong ^a   Kim, Chang Hwan ^a   Lee, Sung Woo ^a   Choi, Sung Woo ^a   Han, Woo Sung ^a   Sohn, Jung Min ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CD uniformity; Cr; Loading effect; Loading height; Macroloading; Selectivity

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ERROR ANALYSIS; PHOTORESISTS; PLASMA ETCHING;

CRITICAL DIMENSION (CD) CONTROL;

MASKS;

EID: 0035763873     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.458341     Document Type: Conference Paper

References (10)

1. ITRS Roadmap, 2000
2. Richard A. Gottsho and C.W.Jurgensen, "Micro scopic uniformity in plasma etching", J. Vac. Sci. Technol. B 10(5), pp.2133-2147, Sep/Oct, 1992
3. Won-Tai Ki, Seung-Hune Yang, Seong-Yong Moon and Seong-Woon Choi, "A new correction method for dry etch loading effect in photomask fabrication". Digest of Papers Microprocesses and Nanotechnology 2000. pp.42-3. Tokyo, Japan.
4. M. Mazhar IslamRaja, "Role of ions in plasma deposition processes", VLSI Multilevel Interconnection Conference, 1994.
5. Hyuk-Joo Kwon, et al., "Dry etching of Cr layer and Its Loading Effect", PMJ2001
6. C.J. Mogab, "The loading effect in plasma etching", J. Electrochem. Soc.: Solid -State Science and Technology, Vol.124, No 8, pp.1262-1268, 1997.
7. Hyuk-Joo Kwon, et al., "Dry etching techno -logy of Cr and MoSi layers using high density plasma source", 20th Anual BACUS Symposium Photomask Technology 2000, Vol.4186, pp532-539, 2000
8. C.Constantine, et al., "Inductively coupled plasma etch of DUV MoSi photomasks;", SPIE, Vol.3546, pp.88-97, 1998.
9. H. Kazumi and K. Tago, "Analysis on plasma chemical reactions in dry etching of silicon dioxide", Dry Process Symposium, pp. 187-192, 1994.
10. S.M. Sze, "VLSI Technology"