Enlarging the usable growth area in a hot-wall silicon carbide CVD reactor by using simulation

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 99-102

  Danielsson, O ^a   Forsberg, U ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; EQUIPMENT TESTING; OPTIMIZATION; TEMPERATURE DISTRIBUTION;

EPITAXIAL LAYERS; GROWTH AREA; HOT WALL REACTOR; POWER INPUT; REACTOR DESIGN;

SILICON CARBIDE;

EID: 14344281831     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.99     Document Type: Article

References (7)

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