Characteristics of Pb(Zr, Ti)O3 thin films prepared on various substrates by source gas pulse-introduced metalorganic chemical vapor deposition

Ferroelectrics

Volumn 260, Issue 1, 2001, Pages 69-74

  Aratani, Masanori ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

deposition temperature; MOCVD; Pb(Zr, Ti)O3; substrate

Indexed keywords

DEPOSITION TEMPERATURES; LOW DEPOSITION TEMPERATURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NUCLEATION SITES; PB(ZR , TI)O; PZT FILM; REMANENT POLARIZATION; SI SUBSTRATES; SOURCE GAS; VARIOUS SUBSTRATES;

FERROELECTRICITY; LEAD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; SILICON; SILICON COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; ZIRCONIUM;

DEPOSITION;

EID: 0037568562     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190108015996     Document Type: Article

References (6)

1. P. Buskink, J. Rosder, T. Baum, S. Bilodeay, M. Russell, S. Johnston, P. Carl, D. Desrochers, B. Hendrix and F. Hintermaer, Integ. Ferro., 21(1998) 273-289.
2. K. Nagashima, M. Aratani and H. Funakubo, Jpn. J. Appl. Phys., 39(2000) L996-L998.
3. H. Funakubo, K. Imashita, N. Kieda, and N. Mizutani, J. Ceram. Soc. Jpn., 99(1991) 248-250.
4. K. Nagashima and H. Funakubo, Jpn. J. Appl. Phys., 39(2000) 212-216.
5. M. Aratani, K. Nagashima and H. Funakubo, Jpn. J. Appl. Phys., submitted for publication.
6. H. J. Nam, D. K. Choi and W. J. Lee, Thin Solid Films, 371(2000) 264-271.