Work function of impurity-doped polycrystalline Si 1-x-y Ge x C y film deposited by ultraclean low-pressure CVD

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 209-212

  Shim, Hyunyoung ^a   Sakuraba, Masao ^a   Tsuchiya, Toshiaki ^b   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SHIMANE UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Metal oxide semiconductor (MOS) device; Polycrystalline Si 1 x y Ge x C y gate; Work function

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LATTICE CONSTANTS; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

WORK FUNCTION;

POLYCRYSTALLINE MATERIALS;

EID: 0037566125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00079-5     Document Type: Conference Paper

References (11)

1. King T.J., McVittie J.P., Saraswat K.C., Pfiester J.R. IEEE Trans. Electron Devices. 41:1994;228.
2. Soref R.A. J. Appl. Phys. 70:1991;2470.
3. Eberl K., Iyer S.S., Zolliner S., Tsang J.C., LeGoues F.K. Appl. Phys. Lett. 60:1992;3033.
4. Osten H.J., Heinemann B., Knoll D., Lippert G., Rücker H. J. Vac. Sci. Technol. B. 16(3):1998;1750.
5. Murota J., Ono S. Jpn. J. Appl. Phys. 33:1994;2290.
6. Noda T., Lee D., Shim H., Sakuraba M., Matsuura T., Murota J. Thin Solid Films. 380:2000;57.
7. Lee D., Noda T., Shim H., Sakuraba M., Matsuura T., Murota J. Jpn. J. Appl. Phys. 40:2001;2697.
8. Ichikawa A., Hirose Y., Ikeda T., Noda T., Fujiu M., Takatsuka T., Moriya A., Sakuraba M., Matsuura T., Murota J. Thin Solid Films. 369:2000;167.
9. Nakayama S., Yonezawa H., Murota J. Jpn. J. Appl. Phys. 23:1984;L493.
10. Nakayama S., Kawashima I., Murota J. J. Electrochem. Soc. 133:1986;1721.
11. S.M. Sze, Physics of Semiconductor Devices, second ed., Wiley, New York, 1981, p. 394.