Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 285-287

  Roh, S D ^b   Hughes, J S ^b   Lammert, R M ^b   Osowski, M L ^b   Beernink, K J ^b   Papen, G C ^b   Coleman, J J ^a,b  

^a IEEE

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Distributed Bragg reflector lasers; Optical spectroscopy; Ridge waveguides; Semiconductor lasers

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPY; SUBSTRATES; VAPORS; WAVEGUIDES;

ATMOSPHERIC PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; DISTRIBUTED BRAGG REFLECTOR LASER; OPTICAL SPECTROSCOPY; RIDGE WAVEGUIDES; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0031103555     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556048     Document Type: Article

References (5)

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5. G. M. Smith, D. V. Forbes, J. J. Coleman, and J. T. Verdeyen, "Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum well lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 873-876, 1993.