Antiguided array diode lasers fabricated with modulated cap thin p-clad structure

IEEE Photonics Technology Letters

Volumn 11, Issue 4, 1999, Pages 415-417

  O, J S ^a   Zory, P S ^a   Schwartz, B D ^b   Setzko, R S ^b   Emanuel, M A ^c   Sperry, V R ^c  

^a University of Florida   (United States)

^b Raytheon Optical Systems Inc   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

ANTIGUIDED ARRAY DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0033115809     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.752533     Document Type: Article

References (16)

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