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Volumn 18, Issue 6, 2003, Pages 486-490

Effects of the linewidth enhancement factor on filamentation in 1.55 μm broad-area laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE DIFFRACTION; FILAMENT WINDING; HIGH POWER LASERS; INJECTION LASERS; NONLINEAR OPTICS; PUMPING (LASER);

ENHANCEMEANT FACTOR; FILAMENTATION;

QUANTUM WELL LASERS;

EID: 0037495283 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/18/6/316 Document Type: Article

Times cited : (6)

References (9)

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- Diehl, R.¹

2
- 0032188480
- 1.5 μm tapered-gain-region lasers with high-CW output powers
- Donnelly J P, Wapole J N, Groves S H, Bailey R J, Missaggia L J, Napoleone A, Reeder R E and Cook C C 1998 1.5 μm tapered-gain-region lasers with high-CW output powers IEEE Photon. Technol. Lett. 10 1377-9
- (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 1377-1379
- Donnelly, J.P.¹ Wapole, J.N.² Groves, S.H.³ Bailey, R.J.⁴ Missaggia, L.J.⁵ Napoleone, A.⁶ Reeder, R.E.⁷ Cook, C.C.⁸

3
- 0030129815
- Nonlinear mechanisms of filamentation in broad-area semiconductor lasers
- Marciante J R and Agrawal G P 1996 Nonlinear mechanisms of filamentation in broad-area semiconductor lasers IEEE J. Quantum Electron. 32 590-6
- (1996) IEEE J. Quantum Electron. , vol.32 , pp. 590-596
- Marciante, J.R.¹ Agrawal, G.P.²

4
- 0031336903
- Numerical simulation of broad-area high-power semiconductor laser amplifiers
- Dai Z, Michalzik R, Unger P and Ebeling K J 1997 Numerical simulation of broad-area high-power semiconductor laser amplifiers IEEE J. Quantum Electron. 33 2240-54
- (1997) IEEE J. Quantum Electron. , vol.33 , pp. 2240-2254
- Dai, Z.¹ Michalzik, R.² Unger, P.³ Ebeling, K.J.⁴

5
- 0012056653
- Direct measurement of linewidth enhancement factors in quantum well lasers of different quantum well barrier heights
- Zhao B, Chen T R, Wu S, Zhuang Y H, Yamada Y and Yariv A 1993 Direct measurement of linewidth enhancement factors in quantum well lasers of different quantum well barrier heights Appl. Phys. Lett. 62 1591-3
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1591-1593
- Zhao, B.¹ Chen, T.R.² Wu, S.³ Zhuang, Y.H.⁴ Yamada, Y.⁵ Yariv, A.⁶

6
- 0031357560
- Epitaxial structure dependence of the linewidth enhancement factor in GaAs and inGaAs quantum well lasers
- Stohs J, Gallant D J, Bossert D J and Brueck S R J 1997 Epitaxial structure dependence of the linewidth enhancement factor in GaAs and inGaAs quantum well lasers Proc. SPIE 2994 542-51
- (1997) Proc. SPIE , vol.2994 , pp. 542-551
- Stohs, J.¹ Gallant, D.J.² Bossert, D.J.³ Brueck, S.R.J.⁴

7
- 0016484178
- Gain spectra in GaAs double heterostructure injection lasers
- Hakki B W and Paoli T L 1975 Gain spectra in GaAs double heterostructure injection lasers J. Appl. Phys. 46 1296-306
- (1975) J. Appl. Phys. , vol.46 , pp. 1296-1306
- Hakki, B.W.¹ Paoli, T.L.²

8
- 0032179138
- Broad-area semiconductor lasers with improved near and far fields using enhanced current spreading
- O'Brien P A, Skovgaard P M W, McInerney J G and Roberts J S 1998 Broad-area semiconductor lasers with improved near and far fields using enhanced current spreading Electron. Lett. 34 1943-4
- (1998) Electron. Lett. , vol.34 , pp. 1943-1944
- O'Brien, P.A.¹ Skovgaard, P.M.W.² McInerney, J.G.³ Roberts, J.S.⁴

9
- 0031646292
- Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: Experimental results
- Marciante J R and Agrawal G P 1998 Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: experimental results IEEE Photon. Technol. Lett. 10 54-6
- (1998) IEEE Photon. Technol. Lett. , vol.10 , pp. 54-56
- Marciante, J.R.¹ Agrawal, G.P.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.