Broad area semiconductor lasers with improved near and far fields using enhanced current spreading

Electronics Letters

Volumn 34, Issue 20, 1998, Pages 1943-1944

  O'Brien, P A ^a   Skovgaard, P M W ^a   McInerney, J G ^a   Roberts, J S ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LASER BEAMS; LASER MODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

BROAD AREA SEMICONDUCTOR LASER; CARRIER DIFFUSION; ENHANCED CURRENT SPREADING LASER; FILAMENTATION;

QUANTUM WELL LASERS;

EID: 0032179138     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981337     Document Type: Article

References (4)

1. THOMPSON, G.H.B.: 'A theory for filamentation in semiconductor lasers including the dependance of dielectric constant on injected carrier density', Opto-Electron., 1972, 4, pp. 257-310
2. LARRSON, A., MITTELSTEIN, M., ARAKAWA., and YARIV, A.: 'High-efficiency broad-area single quantum well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy', Electron. Lett., 1986, 22, pp. 79-81
3. WHITE, J.K., MCINERNEY, J.G., and MOLONEY, J.V.: 'Effects of the injection current profile shape on side-lobes in large-aperture semiconductor laser amplifiers'. Opt. Lett., 1995, 20, pp. 593-595
4. TSANG, W.T.: 'A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam', Appl. Phys. Lett., 1981, 39, pp. 134-137