Measurement of dynamic strain during ultrasonic au bump formation on Si chip

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2478-2482

  Hizukuri, Masafumi ^a   Asano, Tanemasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FEM analysis; Reliability; Strain gauge; Ultrasonic; Wire bonding

Indexed keywords

ELECTRIC BREAKDOWN; FINITE ELEMENT METHOD; ION IMPLANTATION; MOS CAPACITORS; RELIABILITY; SILICON WAFERS; STRAIN GAGES; VOLTAGE MEASUREMENT;

FLAT BAND VOLTAGE; TIME DEPENDENT DIELECTRIC BREAKDOWN TEST; ULTRASONIC VIBRATION;

LSI CIRCUITS;

EID: 0033717507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2478     Document Type: Article

References (4)

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4. C.S. Smith: Phys. Rev. 94 (1954) 42.