Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 118-123

  Shimoyama, Nobuhiro ^a   Machida, Katsuyuki ^a   Shimaya, Masakazu ^a   Akiya, Hideo ^a   Kyuragi, Hakaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC RESISTANCE; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

STUD BUMPING;

MOSFET DEVICES;

EID: 0030672828     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)