Influence of the temperature on the ion photodesorption from O2 adsorbed on Si (1 1 1)7 × 7

Surface Science

Volumn 528, Issue 1-3, 2003, Pages 210-214

  Comtet, G ^a   Dujardin, G ^a   Hellner, L ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Oxygen; Photon stimulated desorption (PSD); Semiconducting surfaces; Silicon

Indexed keywords

CARRIER CONCENTRATION; GAS ADSORPTION; IONS; KINETIC ENERGY; MOLECULAR DYNAMICS; OXYGEN; PHONONS; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; SILICON; THERMAL EXPANSION;

PHOTON STIMULATED DESORPTION (PSD);

DESORPTION;

EID: 0037457413     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02634-1     Document Type: Conference Paper

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